IRF9389TRPBF

$0.65

Description：MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Series：HEXFET®

SKU:b7e22899797a Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF9389TRPBF is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N/P-CH 30V 6.8A/4.6A 8SO. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9389TRPBF

Description：MOSFET N/P-CH 30V 6.8A/4.6A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.8A, 4.6A
Rds On (Max) @ Id, Vgs：27mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id：2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：398pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF9389TRPBF

IRF9389TRPBF

FET, MOSFET Arrays Overview

The IRF9389TRPBF is a HEXFET Power MOSFET containing an N-channel and P-channel enhancement-mode transistor in a single SO-8 package. It provides a maximum drain-source voltage of ±30 V, continuous drain currents of 6.8 A (N-channel) and -4.6 A (P-channel), and typical gate charges of 6.8 nC and 8.1 nC respectively.

FET, MOSFET Arrays Feature Summary

Integrates high-side P-channel and low-side N-channel transistors within one component to increase power density.
Features industry-standard pinout configuration to ensure multi-vendor compatibility and simplify manufacturing processes.

FET, MOSFET Arrays Applications

Load switching
Battery management systems
Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix TRPbF indicates tape and reel packaging with a standard quantity of 4000 units. Confirm RoHS compliance status and consumer qualification level requirements for the target application environment before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require dual-channel functionality in a standard surface mount footprint. Evaluate thermal derating curves against expected ambient temperatures to ensure junction temperature limits are not exceeded during continuous operation.

FET, MOSFET Arrays Part Context

This device belongs to the Infineon HEXFET family, utilizing silicon technology for power switching applications. The base part number is IRF9389PbF, available in bulk tube or tape and reel formats. It is designed for general-purpose switching tasks requiring complementary channel configurations.