IRF9540

Description：MOSFET P-CH 100V 19A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:9aa6df4d2a49 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF9540 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 100V 19A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF9540

Description：MOSFET P-CH 100V 19A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：200mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：61 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF9540

IRF9540

Single FETs, MOSFETs Overview

The IRF9540 is a Vishay Siliconix P-channel power MOSFET in the TO-220AB package. It features a -100 V drain-source voltage and a maximum on-resistance of 0.20 Ω at VGS = -10 V. The device supports a continuous drain current of -19 A at 25 °C case temperature, with a peak pulsed current of -72 A. Total gate charge is typically 61 nC. It operates within a junction temperature range of -55 °C to +175 °C and includes dynamic dV/dt rating and repetitive avalanche energy ratings.

Single FETs, MOSFETs Feature Summary

Third-generation HEXFET technology providing fast switching speeds and low on-resistance.
Ruggedized design featuring dynamic dV/dt rating and repetitive avalanche energy capability.
Optimized for ease of paralleling and simple drive requirements.

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring approximately 50 W power dissipation.
Pulse width modulation (PWM) circuits.
Load switching systems.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm compliance status. Suffixes such as PbF indicate lead-free terminations, while BE3 indicates halogen-free materials. Confirm that the component matches the required RoHS or non-RoHS specifications for the intended assembly process before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust P-channel switching with high thermal tolerance up to 175 °C. Ensure the gate drive voltage aligns with the specified threshold characteristics. Evaluate the thermal resistance parameters to determine appropriate heatsinking for sustained operation near the 150 W maximum power dissipation limit.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix third-generation HEXFET family. It utilizes advanced工艺技术 to achieve low on-resistance and fast switching. The TO-220AB package is widely accepted in the industry for its balance of low thermal resistance and cost-effectiveness in commercial and industrial environments.