IRF9630

Description：MOSFET P-CH 200V 6.5A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:102307b526c4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRF9630 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 200V 6.5A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRF9630

Description：MOSFET P-CH 200V 6.5A TO220AB
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：800mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：74W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRF9630

IRF9630

Single FETs, MOSFETs Overview

The IRF9630 is a third-generation P-Channel Power MOSFET manufactured by Vishay Siliconix. It features a TO-220AB package with a maximum drain-source voltage of -200 V and a continuous drain current of -6.5 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.80 Ω at VGS = -10 V and a total gate charge of 29 nC. Thermal characteristics include a junction-to-case resistance of 1.7 °C/W and a maximum power dissipation of 74 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Dynamic dV/dt rating for robust performance during fast switching transitions
Repetitive avalanche rated capability for handling inductive load energy
Fast switching characteristics combined with low on-resistance
Simple drive requirements suitable for standard logic-level control

Single FETs, MOSFETs Applications

Commercial and industrial power switching applications
DC-DC converter circuits requiring high voltage isolation
Motor driver stages utilizing P-channel topology
Power management systems with moderate current demands

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing, as terminations vary between lead-free (PbF) and tin-lead (SnPb). Confirm RoHS compliance status aligns with project regulatory requirements. Ensure thermal interface materials are compatible with the TO-220AB flange mount style. Validate that the supply chain source provides authentic Vishay Siliconix components to guarantee specified electrical parameters.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a single P-Channel MOSFET with 200 V breakdown. The TO-220AB package facilitates efficient heat dissipation up to approximately 50 W in commercial-industrial environments. Consider the 0.80 Ω on-resistance for conduction loss calculations at -10 V gate drive. Evaluate the 29 nC gate charge against available driver capabilities for optimal switching speed.

Single FETs, MOSFETs Part Context

This device belongs to the IRF series of third-generation Power MOSFETs from Vishay Siliconix. These transistors are engineered to provide an optimized balance of switching speed, ruggedness, and cost-effectiveness. The TO-220AB form factor is widely adopted across industries for its low thermal resistance and mounting versatility.