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IRF9640S2497 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is 11A, 200V, 0.500 OHM, P-CHANNEL. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRF9640S2497
- Description：11A, 200V, 0.500 OHM, P-CHANNEL
- Series：*
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for IRF9640S2497
Single FETs, MOSFETs Overview
The IRF9640S2497 is a P-Channel Power MOSFET manufactured by Harris Corporation. It features a drain-source voltage rating of 200V and a continuous drain current capacity of 11A. The device exhibits a maximum on-resistance of 0.500 ohms, suitable for power switching applications requiring robust performance in high-voltage environments.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode silicon gate technology
- Designed for high-voltage power switching applications
- Optimized for low on-resistance performance
Single FETs, MOSFETs Applications
- Switching regulators
- Power conversion circuits
- High-side load switches
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation carefully, as Harris Corporation's semiconductor assets were acquired by International Rectifier and subsequently Infineon. Ensure the specific suffix matches the required package and tape-and-reel configuration. Confirm datasheet revisions to guarantee compatibility with modern design specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 200V P-Channel MOSFET is required for medium-current switching duties. Evaluate thermal management requirements based on the 0.500 ohm on-resistance at the expected operating temperature. Ensure the gate drive voltage aligns with the threshold characteristics for efficient turn-on.
Single FETs, MOSFETs Part Context
This part belongs to the IRF96xx series of P-Channel Power MOSFETs from Harris Semiconductor. These devices are engineered for general-purpose power switching, offering a balance of voltage handling and current capability. The series is commonly utilized in industrial and consumer power supply designs.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 200V P-Channel MOSFETs with comparable current ratings and on-resistance. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference with Infineon or Vishay catalogs for equivalent modern replacements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
