IRF9910TRPBF-1

Description：MOSFET 2N-CH 20V 10A 8SOIC
Series：HEXFET®

SKU:bf40f08babb9 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IRF9910TRPBF-1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 20V 10A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IRF9910TRPBF-1

Description：MOSFET 2N-CH 20V 10A 8SOIC
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 12A (Ta)
Rds On (Max) @ Id, Vgs：13.4mOhm @ 10A, 10V, 9.3mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V, 23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 10V, 1860pF @ 10V
Power - Max：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for IRF9910TRPBF-1

IRF9910TRPBF-1

FET, MOSFET Arrays Overview

The IRF9910TRPBF-1 is a dual N-channel HEXFET power MOSFET in an SO-8 package. Q1 (Control FET) has VDS of 20V, ID of 10A at 25°C, and RDS(on) max of 13.4mΩ at VGS=10V. Q2 (Synchronous FET) has ID of 12A at 25°C and RDS(on) max of 9.3mΩ at VGS=10V. Gate threshold voltage ranges from 1.65V to 2.55V. Thermal resistance RθJA is 62.5°C/W. Operating junction temperature reaches 150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with industry-standard pinout for multi-vendor compatibility
Compatible with existing surface mount techniques for easier manufacturing
RoHS compliant and halogen-free for environmentally friendly applications
MSL1 qualification level with industrial reliability standards

FET, MOSFET Arrays Applications

Dual SO-8 MOSFET for POL converters in desktops
POL converters in servers
Graphics cards
Game consoles
Set-top boxes

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix against official manufacturer documentation to confirm tape and reel packaging specifications. Confirm that the component meets current RoHS compliance and halogen-free requirements as stated in the datasheet. Ensure the industrial qualification level aligns with your specific application reliability needs before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component when designing point-of-load converters requiring a dual N-channel MOSFET solution. The device offers distinct control and synchronous FET characteristics within a single SO-8 package. Consider the thermal resistance and current derating curves for proper heat dissipation planning in dense PCB layouts.

FET, MOSFET Arrays Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance and fast switching speeds. The dual configuration allows for compact design in synchronous buck converter topologies commonly used in digital electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives with similar RDS(on) and voltage ratings. Verify thermal performance and gate charge parameters match your driver capabilities. Ensure any substitute maintains the same SO-8 package outline and moisture sensitivity level.