IRFB3607PBF

Single FETs, MOSFETs Overview

The IRFB3607PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-220AB through-hole package with a drain-to-source breakdown voltage of 75V and a continuous drain current rating of 80A at 25°C case temperature. The device exhibits a typical static drain-to-source on-resistance of 7.34mΩ, with a maximum limit of 9.0mΩ. Key dynamic characteristics include a total gate charge of 56nC (typical) and 84nC (maximum), an input capacitance of 3070pF, and a forward transconductance of 115S. Maximum power dissipation is rated at 140W.

Single FETs, MOSFETs Feature Summary

• Enhanced body diode dV/dt and dI/dt capability for improved switching performance
• Fully characterized capacitance and avalanche safe operating area (SOA)
• Improved gate, avalanche, and dynamic dv/dt ruggedness

Single FETs, MOSFETs Applications

• High efficiency synchronous rectification in SMPS
• Uninterruptible power supply systems
• High speed power switching circuits
• Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity against official Infineon documentation to ensure compliance with specified electrical limits. Confirm that the TO-220AB package matches the required mechanical footprint and lead configuration for the target PCB design. Ensure thermal management solutions align with the junction-to-case thermal resistance specifications provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust low-voltage switching capabilities within the 75V range. The optimized on-resistance supports high-current handling up to 80A, making it suitable for dense power designs. Evaluate the thermal requirements carefully, as the device relies on case mounting for effective heat dissipation given its 140W power dissipation rating.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed specifically for industrial market applications where reliability and performance are critical. The product line emphasizes ruggedness and efficient power conversion, targeting modern electronic systems that demand high current density and fast switching speeds.

Single FETs, MOSFETs Replacement Considerations

IRFS3607PBF (D2PAK package)

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy (EAS) is thermally limited, with a maximum rating of 120mJ under specific test conditions.

How does the device handle reverse recovery characteristics?

The internal body diode features enhanced dV/dt and dI/dt capability, with a typical reverse recovery time of 33ns at 25°C.