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IRFC9024NB is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 55V 11A DIE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFC9024NB
- Description：MOSFET 55V 11A DIE
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：11A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：175mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Single FETs, MOSFETs datasheet and documents for IRFC9024NB
Single FETs, MOSFETs Overview
The IRFC9024NB is a single P-channel power MOSFET from Infineon Technologies, belonging to the StrongIRFET family. It features a 55 V drain-source breakdown voltage and an on-resistance of 175 mOhms. The device supports a continuous drain current of 11 A and operates within a temperature range of -55 °C to +150 °C. Designed for surface-mount applications, it utilizes a die package configuration suitable for high-efficiency switching in power management circuits.
Single FETs, MOSFETs Feature Summary
- Single P-channel enhancement mode transistor
- StrongIRFET technology for optimized performance
- Surface-mount die package design
Single FETs, MOSFETs Applications
- Power management systems
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and reliability FIT-rate data directly with Infineon or authorized distributors before integration. Confirm that the die package format aligns with your PCB assembly capabilities and thermal management requirements. Ensure compliance with RoHS and REACH standards as specified in the official documentation.
Single FETs, MOSFETs Selection Notes
Select this component when a compact P-channel solution with moderate current handling is required. The 175 mOhm on-resistance offers a balance between conduction losses and cost. Consider the die package constraints for thermal dissipation and mounting infrastructure compared to standard leaded packages.
Single FETs, MOSFETs Part Context
This part belongs to the StrongIRFET series, which integrates advanced trench gate technology. It is categorized under single N-channel and P-channel MOSFETs. The IRFC9024NB serves as a discrete semiconductor switch designed for efficient power conversion tasks.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible P-channel MOSFETs with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics if replacing with alternative manufacturers' components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
