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IRFD213 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 450MA 4DIP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFD213
- Description：MOSFET N-CH 250V 450MA 4DIP
- Series：-
- Mfr：Vishay Siliconix
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：2Ohm @ 270mA, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：4-HVMDIP
- Package / Case：4-DIP (0.300", 7.62mm)
Single FETs, MOSFETs datasheet and documents for IRFD213
Single FETs, MOSFETs Overview
The IRFD213 is a Vishay Siliconix N-channel Power MOSFET designed for general-purpose switching applications. It features a TO-251AA (DPAK) surface-mount package with three terminals. Key electrical parameters include a drain-source breakdown voltage of 100 V and a continuous drain current of 4.7 A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.38 Ohms at a gate-source voltage of 10 V. It operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 64 W.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction
- Surface-mount DPAK packaging for automated assembly
- High-speed switching capability
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against the manufacturer datasheet, as variations may exist regarding lead frame plating or tape-and-reel specifications. Confirm RoHS compliance status directly with the supplier documentation. Ensure the ordering part number matches the exact pinout and thermal characteristics required for the target PCB footprint design.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V rating and moderate current handling are required in a compact surface-mount form factor. Evaluate the thermal resistance capabilities relative to the expected duty cycle and ambient conditions. Compare the on-resistance against alternative packages to ensure efficient power loss management in the specific circuit topology.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the N-channel MOSFET category. It serves as a fundamental active switching element in electronic designs requiring reliable high-voltage isolation and controlled conduction paths.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent devices such as the IRFD213PBF or compatible parts from other manufacturers that match the 100 V / 4.7 A / DPAK specification profile.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
