IRFH7084TRPBF

$0.99

Description：MOSFET N-CH 40V 100A 8PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a09217c351ee Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFH7084TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 100A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFH7084TRPBF

Description：MOSFET N-CH 40V 100A 8PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.25mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：190 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6560 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：156W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IRFH7084TRPBF

IRFH7084TRPBF

Single FETs, MOSFETs Overview

The IRFH7084TRPBF is a single N-channel Power MOSFET from the StrongIRFET family, manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a PQFN 5x6 mm surface-mount package. The device features a drain-source breakdown voltage of 40 V and a maximum continuous drain current of 265 A at a case temperature of 25°C. The typical on-resistance is 0.95 mΩ with a maximum of 1.25 mΩ at VGS = 10V. Key dynamic parameters include a total gate charge of 127 nC and a peak diode recovery dv/dt rating of 4.5 V/ns. The component supports an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

StrongIRFET architecture providing improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche safe operating area (SOA)
Enhanced body diode dV/dt and dI/dt capability for synchronous rectification
Lead-free construction compliant with RoHS standards

Single FETs, MOSFETs Applications

Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
DC/DC converters
DC/AC inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TRPbF against the datasheet table to confirm the tape and reel packaging format containing 4000 units per standard pack. Confirm that the base part number corresponds to the PbF lead-free variant. Ensure the procurement documentation matches the industrial qualification level specified in the datasheet. Cross-reference the manufacturer's latest revision history to ensure the component version aligns with current production standards.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current switching applications requiring robust avalanche performance. The PQFN 5x6 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Consider the gate charge characteristics when designing drive circuits for high-frequency operation in DC/DC or inverter systems.

Single FETs, MOSFETs Part Context

This component belongs to the StrongIRFET series, which integrates advanced cell design for optimized trade-offs between conduction losses and switching performance. The PQFN 5x6 package provides efficient heat dissipation through the bottom pad. The product is qualified for industrial applications according to JEDEC JESD47F guidelines and holds Moisture Sensitivity Level 1 classification.