IRFH7911TR2PBF

FET, MOSFET Arrays Overview

The IRFH7911TR2PBF is a dual N-channel HEXFET power MOSFET in a PQFN 5mm x 6mm package. It integrates a low-charge control FET (Q1) and a low-resistance synchronous FET (Q2). Q1 features an RDS(on) of 8.6 mΩ at VGS=10V with a typical gate charge of 8.3 nC, while Q2 offers 3.0 mΩ RDS(on) with a typical gate charge of 34 nC. Both channels support a 30V drain-source voltage and operate within a -55°C to +150°C junction temperature range.

FET, MOSFET Arrays Feature Summary

• Integrates control and synchronous FETs in one package for increased power density
• Low gate charge on the control FET reduces switching losses
• Low on-resistance on the synchronous FET minimizes conduction losses
• Low profile design compatible with existing surface mount techniques

FET, MOSFET Arrays Applications

• Motor controllers
• Synchronous rectification
• DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation, as it determines packaging quantity and availability status. The TR2 variant indicates a mini-reel format which may have different handling requirements compared to standard tape and reel configurations. Confirm current production status directly with the manufacturer or authorized distributors before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when high power density is required in a compact footprint. The asymmetric configuration allows optimization for both fast switching and low conduction loss. Ensure the gate drive circuitry can handle the distinct gate charge requirements of the control versus synchronous sections. Verify thermal management capabilities align with the specified junction-to-ambient resistance values.

FET, MOSFET Arrays Part Context

This device belongs to the HEXFET G174/G32 family from Infineon Technologies. It utilizes silicon technology and is housed in a lead-free PQFN package. The product line focuses on providing efficient power solutions for modern electronic systems requiring robust performance in small form factors.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same HEXFET series. Verify that any substitute matches the 30V rating and PQFN 5x6 dimensions. Ensure the replacement maintains similar RDS(on) and gate charge characteristics to preserve circuit efficiency and switching behavior.