IRFH8316TRPBF

Description：MOSFET N-CH 30V 27A/50A 8PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:214a097b77ef Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFH8316TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 27A/50A 8PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFH8316TRPBF

Description：MOSFET N-CH 30V 27A/50A 8PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：27A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.95mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：59 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3610 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：3.6W (Ta), 59W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for IRFH8316TRPBF

IRFH8316TRPBF

Single FETs, MOSFETs Overview

The IRFH8316TRPBF is a single N-channel enhancement mode MOSFET from the StrongIRFET series, manufactured by Infineon Technologies. It utilizes silicon technology and features a PQFN-8 (5mm x 6mm) surface-mount package. The device provides a drain-to-source voltage of 30V and supports continuous drain currents up to 120A at a case temperature of 25°C. Key electrical parameters include a maximum on-resistance of 4.3mΩ at VGS=4.5V and 2.95mΩ at VGS=10V, with a typical total gate charge of 30nC. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low thermal resistance to PCB for efficient heat dissipation
Low profile design enabling increased power density
Industry-standard pinout for multi-vendor compatibility
Compatible with existing surface mount manufacturing techniques

Single FETs, MOSFETs Applications

High frequency buck converters
Synchronous rectification in DC/DC modules
Power management integrated circuits
Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm that the received parts match the specified part number and packaging format. Check for physical damage or moisture exposure indicators prior to assembly. Ensure compliance with relevant environmental standards required for your specific application context.

Single FETs, MOSFETs Selection Notes

Evaluate the on-resistance requirements against the available gate drive voltages to ensure optimal conduction losses. Consider the thermal performance characteristics relative to the intended PCB layout and cooling methods. Assess the gate charge specifications to determine driver capability requirements for switching applications.

Single FETs, MOSFETs Part Context

This component belongs to the StrongIRFET family of power MOSFETs designed for high-efficiency power conversion. It represents an evolution in surface-mount technology aimed at reducing footprint while maintaining robust current handling capabilities. The integration of advanced silicon processes allows for superior thermal management compared to traditional packages.