ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IRFHM8228TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 19A 8PQFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFHM8228TRPBF
- Description：MOSFET N-CH 25V 19A 8PQFN
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1667 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 34W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PQFN (3.3x3.3), Power33
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for IRFHM8228TRPBF
Single FETs, MOSFETs Overview
The IRFHM8228TRPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a PQFN 3.3 mm x 3.3 mm package and operates with a drain-to-source voltage of 25 V. The device supports a continuous drain current of up to 65 A at a case temperature of 25°C, limited to 25 A by source bonding technology. Key electrical parameters include a maximum on-resistance of 5.2 mΩ at VGS = 10V and 8.7 mΩ at VGS = 4.5V. Typical gate charge is 9.0 nC, with a maximum gate-to-source voltage rating of ±20 V.
Single FETs, MOSFETs Feature Summary
- Low thermal resistance to the PCB for enhanced heat dissipation
- Low profile design enabling increased power density
- Industry-standard pinout ensuring multi-vendor compatibility
Single FETs, MOSFETs Applications
- Control or synchronous MOSFET for synchronous buck converters
Single FETs, MOSFETs Procurement Notes
Verify the component against official datasheets to confirm the specific ordering suffix matches the required tape and reel packaging format. Ensure that the procurement channel provides valid traceability documentation. Confirm compliance with RoHS standards and moisture sensitivity level requirements prior to integration into manufacturing processes.
Single FETs, MOSFETs Selection Notes
Select this component when designing high-frequency synchronous buck converters requiring low parasitic inductance and efficient thermal management. Evaluate the junction-to-case thermal resistance and the specific current limitations imposed by the source bonding technology to ensure adequate performance under expected operating loads.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is designed for surface mount applications where space constraints and thermal efficiency are critical. The PQFN package offers a compact footprint suitable for modern electronic designs requiring robust power handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains identical pinout configurations and meets or exceeds the original voltage, current, and thermal specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
