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IRFI4020H-117P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 200V 9.1A TO220-5. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IRFI4020H-117P
- Description：MOSFET 2N-CH 200V 9.1A TO220-5
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：200V
- Current - Continuous Drain (Id) @ 25°C：9.1A
- Rds On (Max) @ Id, Vgs：100mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1240pF @ 25V
- Power - Max：21W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-5 Full Pack
- Supplier Device Package：TO-220-5 Full-Pak
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IRFI4020H-117P
FET, MOSFET Arrays Overview
The IRFI4020H-117P is a dual N-channel digital audio power MOSFET in a TO-220 FullPak package. It features a maximum drain-source voltage of 200 V and a continuous drain current of 9.1 A at 25°C. The typical on-resistance is 80 mΩ, with a total gate charge of 19 nC and switch charge of 6.8 nC. Internal gate resistance is typically 3.0 Ω. The device supports a junction temperature up to 150 °C and offers a thermal resistance from junction to ambient of 65 K/W.
FET, MOSFET Arrays Feature Summary
- Integrated half-bridge configuration reduces component count and facilitates PCB layout
- Optimized gate charge and reverse recovery characteristics for improved THD and efficiency
- Low internal gate resistance enhances switching performance
FET, MOSFET Arrays Applications
- Class-D audio amplifier applications
- Half-bridge amplifier configurations
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package lead-form options and material compliance. Ensure that the procurement channel provides valid traceability documents. Confirm that the component meets the intended environmental operating conditions specified in the datasheet before finalizing orders.
FET, MOSFET Arrays Selection Notes
Select this component when designing Class-D audio amplifiers requiring high efficiency and low distortion. The integrated half-bridge design simplifies circuit topology compared to discrete solutions. Consider the thermal management requirements based on the specified junction-to-ambient resistance for the target application environment.
FET, MOSFET Arrays Part Context
This part belongs to the StrongIRFET family of digital audio MOSFETs designed specifically for audio power amplification. It integrates two N-channel switches into a single package to minimize parasitic inductances and improve switching speed relative to discrete alternatives.
FET, MOSFET Arrays Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
