IRFI4212H-117P

FET, MOSFET Arrays Overview

The IRFI4212H-117P is a Digital Audio MOSFET half-bridge from Infineon Technologies, designed for Class-D audio amplifier applications. It integrates two N-channel power MOSFET switches in a TO-220 Full-Pak 5-pin package. The device features a maximum drain-to-source voltage of 100 V and a continuous drain current of 11 A at 25°C. Key electrical parameters include a typical on-resistance of 58 mΩ, total gate charge of 12 nC, and switch charge of 6.9 nC. It operates within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Integrated half-bridge package containing two N-channel MOSFETs to reduce part count and facilitate PCB layout.
• Optimized key parameters including low RDS(ON), low Qg, low Qsw, and low Qrr to improve efficiency, THD, and EMI performance.
• Lead-free package construction suitable for consumer market applications.

FET, MOSFET Arrays Applications

• Class-D audio amplifier applications
• Half-bridge configuration amplifiers delivering up to 150W per channel into 4Ω load

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity by checking the marking against the TO-220 Full-Pak 5-pin outline specifications. Confirm that the ordering suffix matches the lead-form option documented in the official datasheet. Ensure the procurement source provides valid documentation confirming compliance with the stated qualification standards for the consumer market segment.

FET, MOSFET Arrays Selection Notes

Select this component when designing Class-D audio amplifiers requiring an integrated half-bridge solution. The optimized gate charge and reverse recovery characteristics make it suitable for high-efficiency designs targeting improved Total Harmonic Distortion and reduced Electromagnetic Interference. Verify thermal management requirements against the specified junction-to-ambient thermal resistance.

FET, MOSFET Arrays Part Context

This component belongs to the Digital Audio MOSFET series by Infineon Technologies. It utilizes a specific process to achieve low on-resistance per silicon area. The internal gate resistance and body-diode reverse recovery are tuned specifically for digital audio switching frequencies, distinguishing it from general-purpose power MOSFETs.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers: None identified in verified documentation.

FET, MOSFET Arrays FAQ

What is the internal gate resistance value?

The typical internal gate resistance (RG(int)) is 3.4 Ω.

Does the device include integral diodes?

Yes, the MOSFET symbol indicates an integral reverse p-n junction diode associated with each switch.

What is the maximum single pulse avalanche energy?

The absolute maximum rating for single pulse avalanche energy is 41 mJ.