IRFL214PBF

$0.33

Description：MOSFET N-CH 250V 790MA SOT223
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:8c40bee3ce2d Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFL214PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 790MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFL214PBF

Description：MOSFET N-CH 250V 790MA SOT223
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：790mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2Ohm @ 470mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 3.1W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IRFL214PBF

IRFL214PBF

Single FETs, MOSFETs Overview

The IRFL214 is a Vishay Siliconix N-Channel Power MOSFET housed in a SOT-223 surface-mount package. It features a drain-source voltage of 250 V and a continuous drain current of 0.79 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 2.0 Ω at VGS = 10 V and a total gate charge of 8.2 nC. Thermal resistance from junction to case is 40 °C/W, with a maximum power dissipation of 3.1 W at 25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Third-generation silicon technology providing fast switching capabilities and low on-resistance.
Repetitive avalanche rated for ruggedized device design and improved reliability under transient conditions.
Dynamic dV/dt rating ensures stable operation during rapid voltage transitions.
SOT-223 package designed for surface mounting with an enlarged tab for effective heatsinking.

Single FETs, MOSFETs Applications

High-voltage switching circuits requiring surface-mount integration
Power supply designs utilizing repetitive avalanche-rated components
Applications demanding simple drive requirements and ease of paralleling

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm lead-free status and manufacturing location. Confirm that the required package variant matches the SOT-223 outline. Ensure technical parameters align with application requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation in a compact surface-mount form factor. Evaluate thermal management needs carefully due to the moderate power dissipation limits. Verify that the gate charge and threshold voltage are compatible with the intended driver circuitry for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix third-generation Power MOSFET family. These devices are engineered to balance switching speed, conduction losses, and cost-effectiveness. The SOT-223 package provides a robust solution for applications needing better thermal performance than standard small-signal packages while maintaining surface-mount convenience.

Single FETs, MOSFETs Replacement Considerations

SiHFL214TR-GE3 is listed as an alternative with different manufacturing location characteristics.

Single FETs, MOSFETs FAQ

Is the IRFL214 rated for repetitive avalanche energy?

Yes, the datasheet specifies that the device is repetitive avalanche rated with a single pulse avalanche energy (EAS) of 50 mJ and repetitive avalanche energy (EAR) of 0.31 mJ.