IRFL9014TR

Single FETs, MOSFETs Overview

The IRFL9014TR is a third-generation P-Channel Power MOSFET from Vishay Siliconix, housed in a surface-mount SOT-223 package. It features a drain-source voltage (VDS) of -60 V and a continuous drain current (ID) of -1.8 A at a case temperature of 25 °C. The device exhibits a maximum on-state resistance (RDS(on)) of 0.50 Ω at VGS = -10 V and ID = 1.1 A. Key dynamic parameters include a total gate charge (Qg) of 12 nC and a peak diode recovery dV/dt rating of -4.5 V/ns. Thermal performance includes a maximum power dissipation of 3.1 W at TC = 25 °C and a junction-to-case thermal resistance (RthJC) of 40 °C/W.

Single FETs, MOSFETs Feature Summary

• Third-generation power MOSFET technology providing fast switching capabilities and ruggedized device design.
• Repetitive avalanche rated for enhanced reliability under inductive load conditions.
• SOT-223 package designed with an enlarged tab for improved thermal performance and heatsinking.
• Capable of ease of paralleling due to consistent electrical characteristics across devices.

Single FETs, MOSFETs Applications

• Surface-mount applications utilizing vapor phase, infrared, or wave soldering techniques.
• Automatic pick-and-place assembly processes compatible with standard SOT or SOIC handling equipment.
• Power dissipation scenarios requiring greater than 1.25 W in typical surface mount configurations.

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing this component. The base part number IRFL9014TR may be available in lead-free variants such as SiHFL9014TR-GE3 or Pb-free versions like IRFL9014TRPbF-BE3. Confirm that the received material matches the required environmental compliance and manufacturing location specifications defined in the official datasheet before integration into production.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a single P-Channel MOSFET with a -60 V breakdown voltage. Ensure the application operates within the specified continuous drain current limits of -1.8 A at 25 °C case temperature. Consider the thermal resistance ratings and derating factors if operating at elevated temperatures or mounting directly to printed circuit boards rather than using dedicated heatsinks.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix third-generation power MOSFET family. It is manufactured by Vishay Intertechnology, Inc., and is documented under datasheet number 91195. The product line emphasizes cost-effectiveness combined with low on-resistance and high-speed switching performance suitable for modern power management circuits.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not provided in the source documentation. Designers should consult official cross-reference tools or contact authorized Vishay personnel for verified alternative components that match the electrical and mechanical specifications.

Single FETs, MOSFETs FAQ

What is the repetitive avalanche energy rating for the IRFL9014TR?

The device is rated for a repetitive avalanche energy (EAR) of 0.31 mJ, tested under conditions of VDD = -25 V, starting TJ = 25 °C, L = 50 mH, Rg = 25 Ω, and IAS = -1.8 A.

How does the package design enhance thermal performance?

The SOT-223 package features an enlarged tab specifically designed for heatsinking, which allows for power dissipation of greater than 1.25 W in typical surface mount applications compared to standard packages.

What is the peak diode recovery dV/dt rating?

The IRFL9014TR has a peak diode recovery dV/dt rating of -4.5 V/ns, ensuring robust performance during rapid voltage transitions associated with the intrinsic body diode.