IRFP7537PBF

Single FETs, MOSFETs Overview

The IRFP7537PBF is a single N-channel StrongIRFET power MOSFET in a TO-247AC package. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 172A at 25°C case temperature. The device has a typical on-resistance of 2.75mΩ and a maximum of 3.30mΩ at VGS=10V. Total gate charge is typically 142nC. It supports a maximum power dissipation of 230W, operates within a junction temperature range of -55°C to +175°C, and includes avalanche ruggedness characteristics.

Single FETs, MOSFETs Feature Summary

• Improved gate, avalanche, and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche safe operating area (SOA)
• Enhanced body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

• Brushed motor drive applications
• BLDC motor drive applications
• Battery powered circuits
• Half-bridge and full-bridge topologies
• Synchronous rectifier applications

Single FETs, MOSFETs Procurement Notes

Verify the component against official Infineon datasheet specifications for electrical parameters and thermal ratings. Confirm that the TO-247AC through-hole package matches the target PCB layout requirements. Ensure the industrial qualification level meets the operational environment standards. Cross-reference the part number with manufacturer documentation to confirm RoHS compliance and lead-free status before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-current switching applications requiring low on-resistance and robust avalanche performance. The TO-247AC package provides effective thermal management for power dissipation up to 230W. Consider the 60V voltage rating and 172A current capacity when designing motor drives or power converters. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This component belongs to the StrongIRFET family from Infineon Technologies, designed for high-power density applications. It utilizes silicon technology optimized for low RDS(on) and high current handling. The product line targets industrial and general-purpose power electronics, offering improved ruggedness compared to standard MOSFETs. It is distinct from OptiMOS and CoolMOS technologies used in different voltage ranges.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains similar avalanche energy ratings and thermal resistance values. Ensure the replacement package matches the TO-247AC form factor for mechanical integration.