IRFP9240PBF

$2.99

Description：MOSFET P-CH 200V 12A TO247-3
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:f579f2c2d3b2 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFP9240PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 200V 12A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFP9240PBF

Description：MOSFET P-CH 200V 12A TO247-3
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AC
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IRFP9240PBF

IRFP9240PBF

Single FETs, MOSFETs Overview

The Vishay Siliconix IRFP9240PBF is a third-generation P-Channel Power MOSFET housed in a TO-247AC package. It features a drain-source voltage (VDS) of -200 V and a continuous drain current (ID) of -12 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 0.50 Ω at VGS = -10 V. Total gate charge (Qg) is 44 nC, with gate-source charge (Qgs) of 7.1 nC and gate-drain charge (Qgd) of 27 nC. Maximum power dissipation is 150 W at 25 °C, with an operating junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

Dynamic dV/dt rating for robust switching performance
Repetitive avalanche rated capability
Isolated central mounting hole for enhanced safety creepage distance
Fast switching characteristics with simple drive requirements

Single FETs, MOSFETs Applications

Commercial-industrial applications requiring higher power levels than TO-220AB devices
Switching circuits utilizing repetitive avalanche conditions
High-voltage power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and compliance details. Ensure the component matches the exact Vishay Siliconix part number specifications before integration into designs. Cross-reference datasheet revision dates for accurate parameter validation.

Single FETs, MOSFETs Selection Notes

Select this component for applications demanding ruggedized P-Channel MOSFET performance with high voltage tolerance. The TO-247AC package provides superior thermal handling and isolation compared to standard TO-220AB variants. Evaluate thermal resistance ratings and derating factors for high-temperature environments.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix third-generation Power MOSFET family, designed to offer a combination of fast switching, low on-resistance, and cost-effectiveness. The TO-247AC package is specifically engineered for commercial-industrial use where higher power dissipation is required.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides for verified alternatives. Generic cross-references may not match the specific dynamic dV/dt or avalanche ratings documented for this part.