IRFR214PBF

$0.47

Description：MOSFET N-CH 250V 2.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:322a2d8053a5 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR214PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 250V 2.2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR214PBF

Description：MOSFET N-CH 250V 2.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR214PBF

IRFR214PBF

Single FETs, MOSFETs Overview

The IRFR214PBF is a Vishay Siliconix N-Channel Power MOSFET in a DPAK (TO-252) surface-mount package. It features a drain-source voltage of 250 V and a continuous drain current of 2.2 A at 25 °C case temperature. The maximum on-state resistance is 2.0 Ω at a gate-source voltage of 10 V. Key dynamic parameters include a total gate charge of 8.2 nC, turn-on delay time of 7.0 ns, rise time of 7.6 ns, turn-off delay time of 16 ns, and fall time of 7.0 ns. Maximum power dissipation is 25 W at 25 °C.

Single FETs, MOSFETs Feature Summary

Third-generation ruggedized design optimized for fast switching performance.
Repetitive avalanche rated to withstand unclamped inductive switching events.
High peak diode recovery dV/dt rating for robust body diode operation.

Single FETs, MOSFETs Applications

Surface-mount power switching circuits
Unclamped inductive load management
General-purpose high-voltage transistor applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and halogen compliance. Confirm that the component matches the required DPAK (TO-252) package dimensions and pinout configuration for your PCB layout. Ensure thermal derating calculations align with the specified junction-to-case thermal resistance ratings.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V breakdown voltage and surface-mount form factor are required. The device is suitable for applications demanding repetitive avalanche capability and high-speed switching characteristics. Evaluate the 2.0 Ω on-resistance against system efficiency requirements at the intended operating current levels.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay IRFR series of third-generation power MOSFETs. These devices combine fast switching speeds with low on-resistance and cost-effectiveness. The IRFR214 specifically utilizes the DPAK package designed for vapor phase, infrared, or wave soldering techniques.