IRFR224TR

Single FETs, MOSFETs Overview

The IRFR224TR is a third-generation N-channel power MOSFET from Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage of 250 V and a continuous drain current of 3.8 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 1.1 Ω at VGS = 10 V and a total gate charge of 14 nC. It supports repetitive avalanche energy ratings up to 130 mJ and includes a dynamic dV/dt rating for ruggedized operation.

Single FETs, MOSFETs Feature Summary

• Third-generation power MOSFET technology providing optimized fast switching performance combined with low on-resistance.
• Repetitive avalanche rated capability designed for robustness against inductive load switching events.
• Integrated dynamic dV/dt rating to withstand rapid voltage transitions during body diode recovery.
• Surface-mount DPAK package construction enabling efficient thermal dissipation via the exposed drain tab.

Single FETs, MOSFETs Applications

• High-voltage DC-to-DC converter circuits
• Motor control applications requiring ruggedized switching elements
• General-purpose power switching systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and tape-and-reel packaging configuration. Confirm that the component meets RoHS and halogen-free material categorization requirements for your assembly process. Ensure compatibility with vapor phase, infrared, or wave soldering techniques as specified for the DPAK package.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage with moderate current handling capabilities. Evaluate the thermal resistance parameters against your PCB copper area to ensure junction temperatures remain within limits. Consider the gate charge specifications when designing drive circuits to optimize switching speed and minimize driver losses.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR series of third-generation power MOSFETs manufactured by Vishay Siliconix. These devices are engineered to balance switching speed, conduction losses, and cost-effectiveness. The IRFR224 variant specifically targets high-voltage applications where avalanche ruggedness and fast switching are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

IRFR224PbF

Single FETs, MOSFETs FAQ

Is the IRFR224TR rated for repetitive avalanche operation?

Yes, the datasheet specifies that the device is repetitive avalanche rated with a single pulse avalanche energy (EAS) of 130 mJ and a repetitive avalanche energy (EAR) of 4.2 mJ.

What is the peak diode recovery characteristic of the internal body diode?

The device features a dynamic dV/dt rating of 4.8 V/ns, which allows it to handle the rapid voltage changes associated with the reverse recovery of the intrinsic source-drain body diode.