IRFR9020PBF

Single FETs, MOSFETs Overview

The IRFR9020PBF is a P-Channel Power MOSFET manufactured by Vishay Siliconix, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage rating of -50 V and a continuous drain current of -9.9 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.28 Ω at a gate-source voltage of -10 V. Key electrical parameters include a total gate charge of 14 nC maximum, a forward transconductance of 3.5 S typical, and a peak diode recovery dV/dt rating of 5.8 V/ns. Thermal characteristics specify a junction-to-case thermal resistance of 3.0 °C/W maximum.

Single FETs, MOSFETs Feature Summary

• Surface-mountable design utilizing the DPAK (TO-252) package to reduce stray inductances and capacitance for high-volume applications.
• Advanced power MOSFET geometry achieving low on-state resistance combined with high transconductance.
• Superior reverse energy handling and dynamic dV/dt ratings for robust performance.
• Repetitive avalanche rated capability for enhanced circuit reliability.

Single FETs, MOSFETs Applications

• Computers and peripherals
• Telecommunication equipment
• DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm compliance with RoHS and REACH directives as specified in the product documentation. Ensure ordering suffixes match required packaging formats, such as tube versus tape and reel variants. Validate that the specific lot corresponds to the intended manufacturing facility code to guarantee consistency with datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a P-Channel MOSFET with a 50 V breakdown voltage and approximately 10 A current capacity is required. The TO-252 package is suitable for PCB surface mounting where space efficiency is prioritized. Consider the 0.28 Ω maximum on-resistance for conduction loss calculations. Evaluate the 14 nC gate charge against driver capabilities to ensure adequate switching speeds without excessive drive current requirements.

Single FETs, MOSFETs Part Context

This device belongs to the IRFR9020 family from Vishay Siliconix, which includes variations like the straight-lead IRFU9020. The technology utilizes silicon planar trench architecture to optimize performance metrics. It serves as a discrete power switching element within broader semiconductor portfolios designed for general-purpose power management tasks.

Single FETs, MOSFETs Replacement Considerations

IRFU9020PBF

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device supports a single pulse avalanche energy of 250 mJ and a repetitive avalanche energy of 4.2 mJ.

How does the package type affect thermal performance?

The DPAK package provides a maximum junction-to-case thermal resistance of 3.0 °C/W, facilitating heat dissipation through the exposed drain pad to a heatsink.