Single FETs, MOSFETs IRFR9020TRLPBF product image

IRFR9020TRLPBF

$0.66
  • Description:MOSFET P-CH 50V 9.9A DPAK
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)

SKU:4fa9f4a89ee5 Category: Brand:

  
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IRFR9020TRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 50V 9.9A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR9020TRLPBF

  • Description:MOSFET P-CH 50V 9.9A DPAK
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):50 V
  • Current - Continuous Drain (Id) @ 25°C:9.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:280mOhm @ 5.7A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):42W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:DPAK
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR9020TRLPBF

IRFR9020TRLPBF

Single FETs, MOSFETs Overview

The IRFR9020TRLPBF is a Vishay Siliconix P-Channel Power MOSFET in a DPAK (TO-252) surface-mount package. It features a -50 V drain-source voltage and a maximum on-state resistance of 0.28 Ω at a gate-source voltage of -10 V. The device supports a continuous drain current of -9.9 A at 25 °C case temperature, with a total gate charge of 14 nC. Thermal performance includes a junction-to-case resistance of 3.0 °C/W and a maximum power dissipation of 42 W.

Single FETs, MOSFETs Feature Summary

  • Surface-mountable design utilizing the TO-252 package to reduce stray inductances and capacitance for high-volume applications.
  • Advanced geometry achieving low on-state resistance combined with high transconductance and superior reverse energy handling.
  • Capable of repetitive avalanche ratings and dynamic dV/dt specifications for robust switching performance.

Single FETs, MOSFETs Applications

  • DC/DC converters
  • Telecommunication equipment
  • Computers and peripherals

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance details. Confirm that the component matches the required lead-free and halogen-free material categorization standards. Ensure the selected package variant aligns with the intended PCB layout requirements for the TO-252 form factor.

Single FETs, MOSFETs Selection Notes

Select this component based on the requirement for a single-channel P-Channel MOSFET with a -50 V breakdown voltage. Evaluate the thermal management needs against the specified junction-to-case resistance and maximum power dissipation limits. Consider the gate charge characteristics when designing drive circuits for optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR/U series of power MOSFETs manufactured by Vishay Siliconix. The product line utilizes advanced silicon technology to deliver efficient switching capabilities. The TO-252 package provides a balance between power handling and compact surface-mount integration.

Single FETs, MOSFETs Replacement Considerations

IRFU9020PbF

Single FETs, MOSFETs FAQ

What is the peak diode recovery dV/dt rating?

The device has a peak diode recovery dV/dt rating of 5.8 V/ns.

Does the component support repetitive avalanche operation?

Yes, the datasheet specifies repetitive avalanche ratings for the device.

IRFR9020TRLPBFIRFR9020TRLPBF
$0.66
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