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IRFS7762TRLPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 85A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRFS7762TRLPBF
- Description：MOSFET N-CH 75V 85A D2PAK
- Series：HEXFET®, StrongIRFET™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：6.7mOhm @ 51A, 10V
- Vgs(th) (Max) @ Id：3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4440 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IRFS7762TRLPBF
Single FETs, MOSFETs Overview
The IRFS7762TRLPBF is a single N-channel enhancement-mode MOSFET from the Infineon HEXFET and StrongIRFET families. It features a 75 V drain-source voltage rating and supports a continuous drain current of 85 A at case temperature. The device exhibits a maximum on-resistance of 6.7 mΩ at 10 V gate drive. Packaged in a surface-mount PG-TO263-3 (D2PAK) housing, it offers a power dissipation capacity of 140 W. The component operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Utilizes advanced planar trench technology for low thermal resistance and high switching efficiency.
- Engineered with optimized gate charge characteristics to facilitate fast switching speeds and reduced driver losses.
- Features robust avalanche energy capability and high dV/dt rating for reliable operation in demanding environments.
Single FETs, MOSFETs Applications
- Automatic data processing systems
- Automatic opening systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and check for any recent Product Change Notifications regarding marking or packaging updates before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low conduction losses in the 75 V voltage class. Ensure the thermal design accommodates the 140 W power dissipation limit. Verify that the gate drive voltage meets the requirements for achieving the specified minimum on-resistance.
Single FETs, MOSFETs Part Context
This part belongs to the HEXFET and StrongIRFET product lines, representing Infineon's silicon MOSFET technology. These series are designed for general-purpose power switching applications, balancing performance with cost-effectiveness for industrial and consumer electronics markets.
Single FETs, MOSFETs Replacement Considerations
The manufacturer has declared this component obsolete. Review official replacement recommendations or consult distributor databases for equivalent parts with matching electrical parameters and pin configurations.
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