IRFS9N60ATRRPBF

$3.39

Description：MOSFET N-CH 600V 9.2A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9663956b32ac Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFS9N60ATRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 9.2A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFS9N60ATRRPBF

Description：MOSFET N-CH 600V 9.2A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：170W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFS9N60ATRRPBF

IRFS9N60ATRRPBF

Single FETs, MOSFETs Overview

The IRFS9N60ATRRPBF is an N-channel Power MOSFET from the Vishay Siliconix IRFS9N60A series, housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage rating of 600 V and a continuous drain current of 9.2 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.75 Ω at VGS = 10 V. Key electrical parameters include a total gate charge of 49 nC, a gate-source charge of 13 nC, and a gate-drain charge of 20 nC. It supports a single pulse avalanche energy of 290 mJ and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low gate charge for simple drive requirements
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current

Single FETs, MOSFETs Applications

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required tape-and-reel packaging configuration. Confirm RoHS compliance status as specifications may vary between lead-free and non-RoHS variants. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Validate that the specific batch meets the required material categorization standards defined by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche performance and fast switching capabilities. The low gate charge facilitates efficient driver design, while the high breakdown voltage suits offline SMPS topologies. Evaluate thermal management requirements based on the specified linear derating factor and maximum power dissipation limits under varying case temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the IRFS9N60A family of silicon N-channel power MOSFETs manufactured by Vishay Siliconix. The series is designed for general-purpose high-voltage switching applications. The D2PAK package provides a balance of thermal performance and space efficiency for surface-mount implementations.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for cross-reference compatibility with other 600V N-channel MOSFETs in the D2PAK package. Verify pinout alignment and thermal characteristics before substitution.