IRFSL3607PBF

Description：MOSFET N-CH 75V 80A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:5ce7b2c4ca30 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFSL3607PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 80A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFSL3607PBF

Description：MOSFET N-CH 75V 80A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id：4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3070 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRFSL3607PBF

IRFSL3607PBF

Single FETs, MOSFETs Overview

The IRFSL3607PBF is an N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a TO-262 (I2PAK) through-hole package with a drain-to-source breakdown voltage of 75 V and a continuous drain current rating of 80 A at 25°C case temperature. The device exhibits a typical on-resistance of 7.34 mΩ, with a maximum of 9.0 mΩ. Key dynamic parameters include a total gate charge of 56 nC (typical) and 84 nC (maximum), input capacitance of 3070 pF, and a maximum power dissipation of 140 W. The junction temperature range spans from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Enhanced ruggedness for gate, avalanche, and dynamic dv/dt performance
Fully characterized capacitance and avalanche safe operating area
Improved body diode dV/dt and dI/dt capability

Single FETs, MOSFETs Applications

High efficiency synchronous rectification in SMPS
Uninterruptible power supply systems
High speed power switching circuits
Hard switched and high frequency applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against official documentation to confirm the TO-262 package variant. Ensure compatibility with standard I2PAK footprints during integration. Confirm RoHS compliance status and lead-free manufacturing details via the manufacturer's latest datasheet revision before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust low-voltage switching with high current handling capabilities. The enhanced avalanche energy rating supports inductive load protection without external clamping. Evaluate thermal resistance requirements carefully, as the junction-to-case thermal impedance dictates heat sink sizing for sustained operation above ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed for industrial applications. It shares electrical characteristics with the IRFB3607PBF and IRFS3607PBF but utilizes the TO-262 package form factor. The series emphasizes reliability in hard-switching environments and offers optimized body diode recovery characteristics for synchronous rectification topologies.