IRFZ44VPBF

$0.49

Description：MOSFET N-CH 60V 55A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:24a5d96932ad Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFZ44VPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 55A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ44VPBF

Description：MOSFET N-CH 60V 55A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：16.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1812 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：115W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IRFZ44VPBF

IRFZ44VPBF

Single FETs, MOSFETs Overview

The IRFZ44VPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance and fast switching performance. The device features a TO-220AB through-hole package with the drain connected to the case. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 55 A, and a maximum on-resistance of 16.5 mΩ at 10 V gate drive. The gate threshold voltage is 1.8 V, with a total gate charge of 44.7 nC. It supports an operating temperature range from -55°C to +175°C and has a power dissipation rating of 115 W.

Single FETs, MOSFETs Feature Summary

Advanced planar technology for low unit silicon area on-resistance
Logic level gate drive capability
Fully avalanche rated performance

Single FETs, MOSFETs Applications

Power management systems
DC-DC converters
Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet version before integration. Confirm RoHS compliance status as required by project specifications. Check manufacturing lifecycle status, as availability may be restricted or subject to obsolescence notices. Ensure thermal management design aligns with the specified power dissipation limits in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust N-channel switching with high current capacity in a standard through-hole package. Evaluate thermal resistance requirements against the 115 W dissipation limit. Compare gate charge characteristics against driver capabilities to ensure efficient switching speeds. Verify that the 60 V breakdown voltage exceeds the maximum circuit voltage with adequate safety margin.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The HEXFET series is characterized by optimized cell architecture for reduced on-resistance and improved switching efficiency. The IRFZ44VPBF represents a specific variant within this lineup, tailored for general-purpose power switching applications requiring reliable performance in industrial and consumer electronics environments.