IRFZ46ZS

$1.30

Description：MOSFET N-CH 55V 51A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:538fd9335050 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFZ46ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 51A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFZ46ZS

Description：MOSFET N-CH 55V 51A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：13.6mOhm @ 31A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1460 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：82W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRFZ46ZS

IRFZ46ZS

Single FETs, MOSFETs Overview

The IRFZ46ZS is a HEXFET Power MOSFET manufactured by Infineon Technologies, available in D2Pak (IRFZ46ZSPbF), TO-220AB (IRFZ46ZPbF), and TO-262 (IRFZ46ZLPbF) packages. It features an N-channel silicon construction with a drain-to-source breakdown voltage of 55V and a continuous drain current of 51A at 25°C case temperature. The device exhibits a maximum on-resistance of 13.6mΩ at VGS=10V and a total gate charge of 31nC. It supports a junction operating temperature up to 175°C and allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

Utilizes advanced process technology to achieve ultra-low on-resistance per silicon area for high efficiency.
Features fast switching speeds and improved dynamic dv/dt rating for reliable performance.
Designed for 175°C junction operating temperature and allows repetitive avalanche energy up to Tjmax.

Single FETs, MOSFETs Applications

Motor control systems
Switching mode power supplies (SMPS)
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package suffix required for the design: ZS corresponds to D2Pak, ZP to TO-220AB, and ZL to TO-262. Confirm lead-free status as indicated by PbF suffixes in official documentation. Check for automotive qualification requirements if applicable, as standard industrial versions are distinct from qualified variants.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and robust thermal performance up to 175°C. Ensure the gate drive circuit can handle the specified gate charge and voltage limits. Verify that the PCB layout or heatsinking meets the thermal resistance requirements for the chosen package and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET family from Infineon Technologies (formerly International Rectifier). It is designed for industrial market applications and utilizes silicon processing techniques to optimize the balance between on-resistance and switching speed.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IRFZ46NL and IRFZ46ZLPBF. Verify pinout compatibility and electrical parameters such as RDS(on) and VGS(th) before substitution.