IRG4BC10K

Overview

The IRG4BC10K is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 9 A. The device supports a pulsed collector current of 18 A and has a maximum power dissipation of 38 W. It utilizes a TO-220AB through-hole package with three pins. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

• Insulated gate bipolar transistor architecture for efficient switching
• Through-hole mounting capability via TO-220AB package
• Standard input type configuration

Applications

• Industrial motor drives
• Power supply circuits
• Inverter applications

Procurement Notes

Verify the obsolete status of this component before integration, as it may no longer be in active production. Confirm that the TO-220AB package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the 38 W power dissipation limit under expected operating conditions. Check for RoHS compliance status if environmental regulations apply to your specific project constraints.

Selection Notes

Select this IGBT when a 600 V blocking voltage and 9 A continuous current rating are required for through-hole assembly. Consider the 38 W power dissipation capability relative to your thermal design. Evaluate the switching characteristics against your frequency requirements. Compare alternative available components if lead times or availability are critical factors for your supply chain.

Part Context

This component belongs to the family of single IGBTs produced by Infineon Technologies. It is designed for medium-power switching applications requiring robust performance. The TO-220AB package provides mechanical stability and ease of heat sinking. It serves as a discrete semiconductor solution for controlling high-current loads in electronic systems.

Replacement Considerations

Public confirmed substitute part numbers: IKA15N60TXKSA1.