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The IRG4BC10SD-S is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 14 A. The device is housed in a D2PAK surface-mount package, delivering a maximum power dissipation of 38 W. Key electrical parameters include a saturation voltage of 1.8 V at 15 V gate drive and 8 A collector current, with a switching time of 25 ns for turn-on and 630 ns for turn-off under specified test conditions.
Verify the exact suffix designation against official Infineon documentation to ensure correct package and variant identification. Confirm RoHS compliance status as historical data may vary. Check component obsolescence status prior to procurement planning. Ensure supplier provides valid traceability documents matching the specific manufacturing batch.
Select this component for applications requiring a 600 V rated single IGBT in a surface-mount form factor. Evaluate thermal resistance requirements relative to the D2PAK package constraints. Compare switching energy losses against system efficiency targets. Ensure gate driver capabilities match the standard input requirements and voltage thresholds specified for reliable operation.
This part belongs to the IRG4BC series of single IGBTs from Infineon Technologies. The series typically offers robust performance for medium-power industrial applications. The SD suffix indicates a specific surface-mount packaging variant within the broader product family, distinguishing it from through-hole alternatives like the TO-220AB packages found in other series members.
The maximum collector-emitter voltage (VCEO) is rated at 600 V.
The IRG4BC10SD-S utilizes a D2PAK surface-mount package.