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Product Detailed Parameters
- Description：IGBT 600V 14A D2PAK
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：310µJ (on), 3.28mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：76ns/815ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC10SD-SPBF is a Generation 4 insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft-recovery diode. It features a 600V collector-emitter voltage rating and a continuous collector current of 14A at 25°C case temperature. The device utilizes D2Pak or TO-262 packages for standard speed applications. Key electrical parameters include a maximum saturation voltage of 1.8V at 8A, a typical reverse recovery time of 28ns, and a total switching loss of 3.6mJ at 8A.
Feature Summary
- Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations
- Generation 4 IGBT design providing tight Vce(on) distribution and high efficiency
- Minimized diode recovery characteristics to reduce or eliminate snubber requirements
Applications
- Inverter drives operating up to 3 kHz PWM frequency
- Brushless DC motor drives operating up to 4 kHz
- Bridge configurations requiring low conduction losses
Procurement Notes
Verify the specific package variant required, as the S suffix denotes D2Pak and L denotes TO-262. Confirm lead-free status via the PBF suffix. Check manufacturer discontinuation notices as this component may be subject to end-of-life status. Ensure thermal management aligns with the specified junction-to-case resistance values.
Selection Notes
Select based on the required switching frequency and load current profile. The device offers lower conduction losses compared to MOSFETs in similar voltage ratings. Consider the internal emitter inductance for high-speed switching circuits. Verify that the gate drive voltage matches the 15V specification for optimal performance.
Part Context
This component belongs to the International Rectifier (Infineon) Generation 4 IGBT family. It combines standard speed switching capabilities with integrated freewheeling diodes. The product line targets industrial power conversion applications where efficiency and thermal performance are critical.
Replacement Considerations
IRG4BC10SD-LPBF serves as the equivalent TO-262 package version. Cross-reference with other Generation 4 IGBTs from the same manufacturer for pin-compatible alternatives if package changes are permissible.
