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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：140µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：25ns/630ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC10SPbF is a Generation 4 Standard Speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features an n-channel configuration with a collector-to-emitter voltage rating of 600V and a continuous collector current of 14A at 25°C case temperature. The device exhibits a typical saturation voltage of 1.1V at 2A and 15V gate drive. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220AB package.
Feature Summary
- Extremely low voltage drop for minimized power dissipation
- Very tight Vce(on) distribution across devices
- Optimized for specified application conditions
Applications
- Inverter drives up to 3KHz PWM frequency
- Brushless DC drives up to 4KHz
- Chopper applications up to 2KHz
Procurement Notes
Verify the component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering suffix matches the required lead-free specification. Ensure the package type corresponds to the standard TO-220AB form factor. Check for any recent product change notices that might affect specifications or availability status before finalizing procurement decisions.
Selection Notes
Select this IGBT for applications requiring standard switching speeds and high efficiency. Consider the thermal resistance characteristics when designing heat sinks. Evaluate the gate charge requirements against the driving circuit capabilities. Ensure the operating voltage and current limits remain within the specified safe operating area under all expected load conditions.
Part Context
This component belongs to the Generation 4 IGBT family from Infineon Technologies, designed to offer high efficiency. It is part of the standard speed series, suitable for general-purpose power switching applications where moderate switching frequencies are utilized. The device represents a balance between conduction losses and switching performance.
Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without detailed electrical parameter comparison. Verify pinout and thermal characteristics match the existing design constraints.
