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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：28 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 8.6A
- Power - Max：49 W
- Switching Energy：320µJ (on), 1.93mJ (off)
- Input Type：Standard
- Gate Charge：46 nC
- Td (on/off) @ 25°C：21ns/540ns
- Test Condition：480V, 8.6A, 75Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC15MDPbF is a Generation 4 n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery anti-parallel diode. It features a collector-to-emitter voltage of 600V and a continuous collector current of 14A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C, offering a typical saturation voltage of 1.88V at 8.6A. Designed for hard switching applications between 4kHz and 10kHz, it supports short circuit withstand times up to 12µs.
Feature Summary
- Co-packaged IGBT with ultrafast soft recovery anti-parallel diode
- Generation 4 design optimized for high efficiency in mid-range frequencies
- Capable of withstanding 10µs short circuits at VGS = 15V
- Positive-only gate drive compatibility eliminates need for negative bias
Applications
- Appliance motor drives
- Industrial power supplies
- Bridge circuit single package switches
- Low EMI designs requiring minimal snubbing
Procurement Notes
Verify the specific ordering suffix 'MDPbF' against official Infineon documentation to confirm lead-free status and exact thermal/mechanical specifications. Ensure the component matches the TO-220AB industry standard package outline. Confirm availability through authorized distributors as this part may be subject to lifecycle changes.
Selection Notes
Select this component for intermediate power applications operating between 4kHz and 10kHz where low saturation voltage is critical. It is suitable for designs requiring ruggedness against short circuits and simplified gate drive requirements without negative bias voltages. Consider thermal management capabilities based on the specified junction-to-case resistance values.
Part Context
This device belongs to the IRG4BC series of Generation 4 IGBTs from Infineon Technologies (formerly International Rectifier). It utilizes silicon technology and is housed in a TO-220AB package. The series is engineered to provide tighter parameter distribution and higher efficiency compared to previous generations, targeting cost-effective solutions for appliance and industrial markets.
Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Cross-reference parameters such as VCES, IC, VCE(sat), and package type when evaluating alternatives.
