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The IRG4BC15UD-L is a single silicon Insulated Gate Bipolar Transistor (IGBT) designed for industrial applications. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A. The device operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 49 W. Packaged in the TO-262 (D2PAK) through-hole format, it offers a saturation voltage of 1.95 V and gate-emitter limits of ±20 V.
Verify component authenticity through authorized channels due to market availability fluctuations. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions maintain integrity given the component's age and potential obsolescence status in certain regions.
Select this IGBT for circuits requiring 600V blocking capability and moderate current handling up to 14A. The TO-262 package facilitates efficient heat sinking compared to smaller surface-mount alternatives. Evaluate thermal resistance requirements against the 49W dissipation limit for the intended application environment.
This component belongs to Infineon’s BC15 series of ultrafast IGBTs, engineered for efficiency in medium-power conversion tasks. The 'L' suffix denotes the specific TO-262 through-hole packaging variant, distinguishing it from surface-mount counterparts like the DPAK version. It represents a mature technology platform widely adopted in established industrial power electronics architectures.
Consult official replacement guides for direct equivalents such as the IRG4BC15UD-S or IRG4BC15UD-SPBF. Verify pinout compatibility and thermal characteristics when substituting with different package types. Cross-reference updated datasheets for any parameter shifts in switching times or saturation voltages.