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The IRG4BC15UD-LPBF is an Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a 600V collector-to-emitter voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous collector current of 14A at 25°C case temperature and 7.8A at 100°C. Typical saturation voltage is 2.02V at 15V gate drive and 7.8A collector current. Maximum power dissipation is 49W at 25°C. It utilizes the industry-standard D2PAK or TO-262 package.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision matches the specific manufacturing lot. Ensure thermal interface material application adheres to specified resistance values. Validate soldering profiles against the provided maximum temperatures to prevent package damage during assembly processes.
Select this component for designs requiring integrated freewheeling diodes to reduce board space. Consider the thermal resistance characteristics when designing heatsinking solutions. Evaluate gate drive compatibility with positive-only logic levels. Assess switching loss performance against the target operating frequency and load current requirements.
This part belongs to the UltraFast CoPack IGBT series from Infineon Technologies. It combines an n-channel IGBT with an anti-parallel diode in a single lead-free package. The series targets industrial and appliance markets where compact size and high switching efficiency are critical design constraints.
IRG4BC15UD-SPBF is a verified equivalent part number within the same product family.