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The IRG4BC20FPbF is a Generation 4 Fast Speed IGBT in a TO-220AB package. It features a collector-emitter breakdown voltage (Vces) of 600 V and a continuous collector current (Ic) of 20 A at 25°C. The typical saturation voltage (Vce(on)) is 1.74 V at 15 V gate drive and 9 A. Thermal resistance junction-to-case is 0.83 K/W, while junction-to-ambient is 62 K/W. Total gate charge is 52 nC at 400 V.
Verify the specific ordering suffix matches the required lead-free configuration. Confirm that the TO-220AB package dimensions align with the target heatsink and PCB layout constraints. Ensure the gate drive circuit supports the specified 15 V level for optimal performance.
Select this component for applications requiring high efficiency at medium frequencies. Consider the thermal resistance values when designing the cooling solution. Verify that the 600 V rating provides sufficient margin for the DC bus voltage and transient spikes in the target circuit topology.
This device belongs to the IRG4BCxxxF series of Generation 4 IGBTs from Infineon Technologies. It utilizes industry-standard TO-220AB packaging for easy mounting on heatsinks. The product line focuses on balancing switching speed and conduction losses for industrial power conversion.
IRG4BC20D