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The IRG4BC20FD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft-recovery anti-parallel diode, manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C case temperature. The device utilizes TO-220AB packaging for through-hole mounting. Key electrical parameters include a gate charge of 27 nC, turn-on delay time of 43 ns, and turn-off delay time of 240 ns under specified test conditions.
Verify the component status as discontinued before initiating procurement processes. Confirm that the specific package variant matches the required mechanical footprint for the target design. Ensure compliance with environmental regulations applicable to legacy components, noting potential RoHS non-compliance for original manufacturing runs.
Select this component for designs requiring a single IGBT with an integrated freewheeling diode in a through-hole package. Evaluate the thermal management requirements against the specified junction-to-case thermal resistance. Consider the switching characteristics relative to the intended operating frequency and load current levels to ensure optimal efficiency.
This part belongs to the IRG4BC series of fast IGBTs from Infineon Technologies. The series is characterized by high-speed switching capabilities and integrated diodes, targeting applications where compactness and reduced switching losses are critical. The TO-220AB package provides a standardized form factor for prototyping and lower-volume production environments.
Public confirmed substitute part numbers: None identified in verified documentation.