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Product Detailed Parameters
- Description：IGBT 600V 16A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：16 A
- Current - Collector Pulsed (Icm)：32 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 9A
- Power - Max：60 W
- Switching Energy：340µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：34 nC
- Td (on/off) @ 25°C：54ns/180ns
- Test Condition：480V, 9A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC20KDPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, housed in a D2PAK surface-mount package. It features an integrated ultrafast soft-recovery anti-parallel diode, forming a reverse-conducting configuration. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. Key electrical parameters include a saturation voltage of 2.27 V at 9 A, a gate charge of 18 nC, and a short-circuit withstand time of 10 µs at 125°C. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Integrated HEXFRED ultrafast soft-recovery diode for bridge configurations
- Short-circuit rated capability up to 10 microseconds
- Generation 4 IGBT design for high efficiency
- Optimized for high-frequency operation above 5 kHz
Applications
- High-frequency motor control drives
- Power factor correction circuits
- DC-AC inverters
- Switched-mode power supplies
Procurement Notes
Verify the specific suffix 'PBF' against official Infineon documentation to confirm lead-free compliance status. Confirm that the D2PAK package variant matches the required PCB footprint. Check for end-of-life notifications or discontinuation notices from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component when a compact surface-mount solution with integrated freewheeling diode functionality is required. The Generation 4 technology offers tighter parameter distribution compared to previous generations. Ensure the application circuit can handle the specified short-circuit rating if fault protection is not instantaneous.
Part Context
This part belongs to the IRG4BC series of reverse-conducting IGBTs. It replaces older International Rectifier products such as the IRGBC20KD2-S. The integration of the diode reduces component count and board space in half-bridge applications. It utilizes industry-standard packaging for easy integration into existing designs.
Replacement Considerations
Officially documented replacements include the IRGBC20KD2-S and IRGBC20MD2-S. Verify pinout compatibility and thermal characteristics when substituting these legacy parts.
