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Product Detailed Parameters
- Description：IGBT 600V 19A D2PAK
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：19 A
- Current - Collector Pulsed (Icm)：38 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 10A
- Power - Max：60 W
- Switching Energy：320µJ (on), 2.58mJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：62ns/690ns
- Test Condition：480V, 10A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20SD-SPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier. It features an N-channel configuration with a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 15A at 25°C. The device incorporates an ultrafast, soft-recovery anti-parallel diode co-packaged with the IGBT chip. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.3V at 15V gate drive and 15A collector current. The component is housed in a D2PAK surface-mount package and supports junction temperatures up to 175°C.
Feature Summary
- Generation 4 IGBT design optimized for high efficiency and tight parameter distribution
- Co-packaged HEXFRED ultrafast, soft-recovery anti-parallel diode for bridge applications
- Short-circuit rated capability to withstand fault currents for specified durations
Applications
- High-frequency motor control systems
- Switch-mode power supplies
- Inverter circuits requiring hard switching operation above 5 kHz
Procurement Notes
Verify the specific suffix 'SD' against official datasheets to confirm pinout and thermal characteristics, as suffixes often denote specific tape-and-reel packaging or variant revisions. Ensure the source document explicitly lists this exact part number to avoid confusion with similar IRG4BC series components that may share electrical ratings but differ in physical dimensions or internal die specifications.
Selection Notes
Select this component for designs requiring a 600V rating with moderate current handling in a compact surface-mount footprint. The integrated ultrafast diode simplifies circuit topology by eliminating the need for external freewheeling diodes in half-bridge configurations. Evaluate thermal management requirements carefully, as the D2PAK package relies on PCB copper area for heat dissipation during continuous operation.
Part Context
This device belongs to the IRG4BC family of Generation 4 IGBTs from International Rectifier, now part of Infineon Technologies. The BC series typically denotes standard switching performance with integrated diodes, while the Generation 4 architecture offers improved efficiency over previous iterations. This specific model targets industrial applications where reliability and switching speed are critical constraints.
Replacement Considerations
Public documentation indicates that the IRG4BC20KD-SPBF serves as a functional replacement within the same product line. Verify compatibility by comparing the collector-emitter saturation voltage and diode recovery characteristics. Ensure the substitute maintains the same D2PAK-3 package outline to fit existing board layouts without mechanical modification.
