ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 13A 60W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 6.5A
- Power - Max：60 W
- Switching Energy：160µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：39ns/93ns
- Test Condition：480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4BC20UD-STRR is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a 600 V collector-to-emitter voltage rating and operates in a D2PAK surface-mount package. The device supports a continuous collector current of 13 A at 25°C case temperature and handles a pulsed collector current of 52 A. Maximum power dissipation is rated at 60 W at 25°C. The IGBT exhibits a typical saturation voltage of 1.85 V at 15 V gate drive and 6.5 A collector current.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations.
- Optimized for high operating frequencies, supporting 8-40 kHz in hard switching and over 200 kHz in resonant mode.
- Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs.
Applications
- High-frequency hard switching power supplies
- Resonant mode power conversion circuits
- Bridge configurations requiring integrated freewheeling diodes
Procurement Notes
Verify the specific ordering suffix STRR against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact Generation 4 electrical characteristics required for your circuit design. Cross-reference the datasheet revision date to confirm technical parameters have not been updated. Confirm lead-free status compliance if required by your manufacturing standards.
Selection Notes
Select this component when designing circuits requiring high-efficiency switching at frequencies up to 40 kHz. The integrated HEXFRED diode eliminates the need for external snubbers in many bridge applications due to minimized reverse recovery characteristics. Consider the thermal resistance values and maximum junction temperature limits when determining heat sink requirements for sustained operation.
Part Context
This part belongs to the IRG4BC series of UltraFast CoPack IGBTs from Infineon Technologies. It utilizes the industry-standard D2Pak package for surface mount installation. The series is characterized by Generation 4 technology, offering improved efficiency and parameter consistency over earlier iterations.
Replacement Considerations
The datasheet specifies that this device is designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pinout compatibility and thermal interface dimensions before substituting older generation parts in existing designs.
