IRG4BC20UDSTRLP

$0.98

Description：IGBT 600V 13A 60W D2PAK
Series：-

SKU:23a92dfe276e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 13A 60W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：13 A
Current - Collector Pulsed (Icm)：52 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 6.5A
Power - Max：60 W
Switching Energy：160µJ (on), 130µJ (off)
Input Type：Standard
Gate Charge：27 nC
Td (on/off) @ 25°C：39ns/93ns
Test Condition：480V, 6.5A, 50Ohm, 15V
Reverse Recovery Time (trr)：37 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC20UDSTRLP

Overview

The IRG4BC20UDSTRLP is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft-recovery diode, housed in a D2Pak package. It features a collector-to-emitter voltage of 600 V and a continuous collector current of 13 A at 25°C case temperature. The device offers a typical saturation voltage of 1.85 V at 6.5 A and 15 V gate drive. Switching characteristics include a turn-on delay of 39 ns and a fall time of 110 ns at 25°C. Total switching losses are 0.29 mJ under standard test conditions.

Feature Summary

Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations.
Optimized for high operating frequencies ranging from 8-40 kHz in hard switching applications.
Designed as a drop-in replacement for equivalent industry-standard Generation 3 International Rectifier IGBTs.

Applications

High-frequency motor control systems
Resonant mode power supplies exceeding 200 kHz
Bridge configurations requiring integrated freewheeling diodes

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape-and-reel packaging and lead-free status. Ensure the component matches the industrial market qualification standards defined by Infineon Technologies. Cross-reference the part number with the original datasheet PDF provided to validate all electrical parameters before integration into designs.

Selection Notes

Select this component for applications requiring high efficiency and tight parameter distribution. Consider the thermal resistance values and maximum power dissipation limits when designing heat sinks. Evaluate the switching loss characteristics against the specific operating frequency and load current requirements to ensure optimal performance within the safe operating area.

Part Context

This device belongs to the UltraFast CoPack series from Infineon Technologies, combining a Generation 4 N-channel IGBT with a HEXFRED diode. It utilizes the industry-standard D2Pak package and is designed for industrial markets. The product line emphasizes minimized recovery characteristics to reduce noise, EMI, and switching losses in power conversion circuits.

Replacement Considerations

Publicly confirmed substitutes include the IRG4BC20KD-S and IRG4BC20MD2-S products, which are explicitly stated as being replaced by this generation of devices.