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Product Detailed Parameters
- Description：IGBT 600V 13A D2PAK
- Series：-
- Mfr：International Rectifier
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 6.5A
- Power - Max：60 W
- Switching Energy：160µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：27 nC
- Td (on/off) @ 25°C：39ns/93ns
- Test Condition：480V, 6.5A, 50Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC20UDSTRRP is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) co-packaged with an ultrafast soft-recovery anti-parallel diode. It utilizes the HEXFRED technology for optimized performance in bridge configurations. The device features a D2Pak package and is rated for high-frequency operation above 5.0 kHz. It includes short-circuit capability of 10µs at 125°C with VGE = 15V. Key electrical parameters include a collector-emitter voltage (Vces) of 600V, a typical saturation voltage (Vce(on)) of 2.27V at Vge=15V, and a continuous collector current (Ic) of 9.0A.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Co-packaged with HEXFRED ultrafast, ultra-soft-recovery diodes to minimize recovery characteristics, reducing noise, EMI, and switching losses.
- Short-circuit rated for robust operation under fault conditions.
Applications
- High frequency motor control applications
- Bridge configurations in power electronics
- Inverter grade circuits
Procurement Notes
Verify the specific suffix STRRP against official datasheets to confirm tape-and-reel packaging and lead-free status. Ensure compatibility with existing thermal management solutions designed for the D2Pak footprint. Cross-reference part numbers to confirm it replaces legacy models like IRGBC20KD2-S.
Selection Notes
Select this component for designs requiring high power density and efficient switching at frequencies exceeding 5.0 kHz. The co-packaged diode simplifies layout for bridge topologies. Evaluate thermal resistance requirements for the D2Pak package under expected load conditions. Confirm gate drive voltage levels match the 15V specification for optimal performance.
Part Context
This part belongs to International Rectifier's Generation 4 Co-Pack IGBT series, which integrates IGBTs with HEXFRED diodes. This family targets cost-effective, high-efficiency solutions for motor drives and inverters. The product line emphasizes reduced switching losses and improved reliability through advanced silicon technologies.
Replacement Considerations
Official documentation indicates this part replaces IRGBC20KD2-S and IRGBC20MD2-S. Verify pinout and thermal characteristics when substituting these legacy parts. No other direct cross-compatibility claims are supported by available data.
