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Product Detailed Parameters
- Description：IGBT 600V 31A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：230µJ (on), 1.18mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：21ns/200ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30F-S is a standard input Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 31 A at 25°C. The device supports a pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Key electrical parameters include a saturation voltage of 1.8 V at 17 A with a 15 V gate drive, a gate charge of 51 nC, and turn-on/turn-off delay times of 21 ns and 200 ns respectively under specified test conditions.
Feature Summary
- Standard input configuration for straightforward gate drive integration
- Surface mount D2PAK package design for efficient thermal management
- Balanced switching performance suitable for high-frequency applications
Applications
- Switching power supplies
- Motor control inverters
- Uninterruptible power systems
Procurement Notes
Verify the specific suffix (e.g., STRR or STRL) to confirm tape and reel packaging requirements. Ensure the ordering part number matches the exact voltage and current ratings needed for the target circuit design. Cross-reference the datasheet version to confirm parameter consistency before finalizing procurement specifications.
Selection Notes
Select this component when a 600 V IGBT with moderate current handling is required in a surface-mount form factor. Consider the 1.8 V saturation voltage for conduction loss calculations and the 51 nC gate charge for driver capability assessment. Verify that the thermal resistance characteristics of the D2PAK package align with the system's heat dissipation capabilities.
Part Context
This device belongs to the IRG4BC series of IGBTs from Infineon, designed for general-purpose power switching applications. The series offers a combination of low conduction losses and fast switching speeds. The BC variant typically denotes specific optimization for efficiency and thermal performance within the broader product portfolio.
Replacement Considerations
Check for direct pin-compatible replacements within the same Infineon family, such as other IRG4BC models with adjusted current ratings. Ensure any substitute maintains the 600 V breakdown voltage and compatible gate threshold characteristics.
