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The IRG4BC30F-SPBF is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes the Generation 4 IGBT design and is housed in a TO-220-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 34 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.84 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 100 W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized channels due to End-of-Life status. Confirm RoHS compliance details via official documentation. Ensure ordering suffixes match specific packaging requirements. Validate datasheet revisions before integration into new designs.
Select this component for applications requiring standard switching characteristics in the 600V class. Compare against ultrafast variants if higher frequency performance is necessary. Evaluate thermal management solutions based on the 100 W power dissipation limit and TO-220-3 package constraints.
This discrete IGBT belongs to the IRG4BC series from Infineon Technologies. It represents a legacy product line transitioning out of active production. The TO-220-3 form factor is common in industrial power electronics, offering reliable through-hole connectivity for medium-power applications.
The IRG4BC30U-SPBF is an available alternative within the same family, featuring UltraFast characteristics and a D-PAK surface-mount package. Verify pin compatibility and thermal resistance differences when substituting between through-hole and surface-mount versions.