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The IRG4BC30F-STRL is a surface-mount Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 31 A at 25°C. The device supports a pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Key electrical parameters include a typical saturation voltage of 1.8 V at 17 A, gate charge of 51 nC, and turn-on/turn-off delay times of 21 ns and 200 ns respectively. It is housed in a D2PAK (TO-263-3) package.
Verify the specific suffix STRL indicates tape and reel packaging when sourcing components. Confirm the manufacturer part number matches the exact Infineon designation to ensure compatibility with design specifications. Check for RoHS compliance status as required by project regulations. Validate that the received devices match the documented pinout and thermal characteristics before integration into production lines.
Select this component for designs requiring a 600 V rated IGBT in a compact surface-mount form factor. Consider the 31 A continuous current rating and 100 W power dissipation limits against the expected load conditions. Evaluate the switching energy values relative to the target operating frequency and thermal management capabilities of the printed circuit board layout.
This device belongs to the G4BC series of IGBTs from Infineon, which are optimized for medium-power applications. The series combines low conduction losses with fast switching speeds. The D2PAK package provides a robust mechanical solution for high-current density requirements while maintaining standard footprint compatibility for existing designs.
Cross-reference with other Infineon G4BC series parts or equivalent 600 V 30 A class IGBTs in TO-263 packages. Ensure substitute devices match the critical parameters of Vces, Ic, and package dimensions for direct replacement without PCB redesign.