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The IRG4BC30FD-S is a Fast CoPack IGBT featuring an integrated hyperfast diode, designed for medium power applications. It operates with a collector-to-emitter voltage of 600 V and supports continuous collector currents of 31 A at 25°C and 17 A at 100°C. The device utilizes a D2Pak package to minimize internal emitter inductance. Key electrical parameters include a maximum gate-to-emitter voltage of ±20 V, a typical total gate charge of 51 nC, and a maximum junction temperature of 150°C.
Verify the exact suffix against official documentation to confirm lead-free status and specific thermal characteristics. Confirm that the component matches the required pinout and package dimensions for your PCB layout. Ensure compatibility with existing gate drive circuits regarding voltage thresholds and current requirements.
Select this component based on its 600 V rating and current handling capabilities suitable for medium power designs. Consider the D2Pak package for its thermal performance and low inductance benefits. Evaluate the switching losses and diode recovery characteristics against system efficiency targets.
This part belongs to Infineon's Fast CoPack IGBT series, which integrates a fast diode to reduce parasitic inductance. The D2Pak package provides a compact solution for surface mount applications requiring robust thermal management and high switching speeds.
IRG4BC30FD-SPbF