ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 31A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：100 W
- Switching Energy：370µJ (on), 1.42mJ (off)
- Input Type：Standard
- Gate Charge：57 nC
- Td (on/off) @ 25°C：22ns/250ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：46 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
Download product information
Overview
The IRG4BC30FD1 is a surface-mount Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 31 A at 25°C. The device supports a pulsed collector current of 120 A and has a maximum power dissipation of 100 W. Key electrical parameters include a typical saturation voltage of 1.8 V at 17 A with a 15 V gate drive, a gate charge of 51 nC, and turn-on/turn-off delay times of 21 ns and 200 ns respectively under specified test conditions.
Feature Summary
- High short-circuit rating optimized for motor control applications
- Combines low conduction losses with high switching speed
- Latest generation design provides tighter parameter distribution and higher efficiency
Applications
- Motor control systems
- Power conversion circuits
- Switching power supplies
Procurement Notes
Verify the specific suffix 'D1' against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the required 600V/31A ratings and D2PAK form factor. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components and confirm RoHS compliance status.
Selection Notes
Select this IGBT for designs requiring robust short-circuit tolerance and efficient thermal management in compact surface-mount layouts. Consider the 1.8 V saturation voltage for conduction loss calculations and the 51 nC gate charge for driver selection. Evaluate the 10 µs short-circuit time capability against the specific fault protection requirements of the target application circuit.
Part Context
This component belongs to the IRG4BC series of IGBTs from Infineon, designed for medium-power switching applications. It serves as an evolution of earlier models like the IRGBC30K and IRGBC30M, offering improved efficiency and parameter consistency. The device integrates standard N-channel IGBT technology suitable for industrial and consumer electronics power stages.
Replacement Considerations
Official documentation indicates that the IRG4BC30F-STRL variant shares identical electrical characteristics and physical dimensions. Designers may consider this alternative if supply constraints exist, provided the packaging format aligns with assembly requirements.
