IRG4BC30KD-SPBF

Description：IGBT 600V 28A 100W D2PAK
Series：-

SKU:2721c4a5fa1a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 28A 100W D2PAK
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：28 A
Current - Collector Pulsed (Icm)：56 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
Power - Max：100 W
Switching Energy：600µJ (on), 580µJ (off)
Input Type：Standard
Gate Charge：67 nC
Td (on/off) @ 25°C：60ns/160ns
Test Condition：480V, 16A, 23Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：D2PAK
Grade：-
Qualification：-

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IRG4BC30KD-SPBF

Overview

The IRG4BC30KD-SPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-220-3 through-hole package and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 17 A at 25°C and includes an integrated ultrafast soft recovery diode. Key electrical parameters include a collector-emitter saturation voltage of 1.84 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 100 W. The component functions within a temperature range of -55°C to +150°C.

Feature Summary

Integrates an ultrafast soft recovery diode for enhanced switching performance
Utilizes Generation 4 IGBT design for tighter parameter distribution
Optimized for high operating frequencies in hard switching applications

Applications

High-frequency power conversion circuits
Motor drive systems requiring fast switching
Resonant mode power supplies

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm pinout compatibility and thermal characteristics. Confirm RoHS compliance status via the latest datasheet revision. Ensure the procurement channel provides traceable manufacturing records. Validate that the received components match the exact part number specifications before integration into production lines.

Selection Notes

Select this component when a discrete IGBT with an integrated anti-parallel diode is required for 600V applications. The TO-220-3 package suits designs needing robust thermal management via heatsinking. Consider the 17 A current rating and 100 W dissipation capability for medium-power loads. Evaluate the ultrafast diode recovery time if reverse conduction speed is critical to system efficiency.

Part Context

This device belongs to the IRG4BC series of Generation 4 IGBTs from Infineon. It represents a transition from older International Rectifier products to modern Infineon discrete solutions. The KD suffix typically denotes the inclusion of a built-in diode, distinguishing it from standard discrete IGBTs like the IRG4BC30SPBF which lacks this feature.