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The IRG4BC30KDSTRRP is a standard IGBT module manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 17 A. The device incorporates an ultrafast soft recovery diode, with a maximum reverse recovery time of 120 ns. Packaged in a TO-220AB flange mount configuration, it supports a maximum junction temperature of 150 °C and offers a thermal resistance from junction to case of 0.112 K/W.
Verify the specific suffix STRRP against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component matches the TO-220AB flange mount form factor required for your thermal management strategy. Cross-reference the 17 A current rating and 600 V blocking capability with your circuit design requirements before finalizing procurement.
Select this component when a combined IGBT and diode solution is needed in a single TO-220AB package. The integrated ultrafast soft recovery diode reduces switching losses and electromagnetic interference compared to discrete solutions. Consider the 0.112 K/W thermal resistance for heatsink sizing in high-power applications requiring reliable operation up to 150 °C junction temperature.
This part belongs to Infineon's lineup of insulated gate bipolar transistors with built-in diodes. It utilizes silicon technology and is designed for high-power switching applications. The device is classified under discrete semiconductors and transistors, specifically tailored for phase control and industrial power conversion systems where compact integration and fast recovery characteristics are critical.
Consult Infineon datasheets for direct replacements within the IRG4BC series or equivalent International Rectifier legacy parts. Verify pinout compatibility and thermal performance metrics when substituting with other TO-220AB packaged IGBTs featuring integrated diodes.