IRG4BC30KDSTRRP

IRG4BC30KDSTRRP

  • Description:IGBT 600V 28A 100W D2PAK
  • Series:-

SKU:1aebfda5f528 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 600V 28A 100W D2PAK
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):28 A
  • Current - Collector Pulsed (Icm):56 A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 16A
  • Power - Max:100 W
  • Switching Energy:600µJ (on), 580µJ (off)
  • Input Type:Standard
  • Gate Charge:67 nC
  • Td (on/off) @ 25°C:60ns/160ns
  • Test Condition:480V, 16A, 23Ohm, 15V
  • Reverse Recovery Time (trr):42 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Grade:-
  • Qualification:-

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IRG4BC30KDSTRRP

Overview

The IRG4BC30KDSTRRP is a standard IGBT module manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 17 A. The device incorporates an ultrafast soft recovery diode, with a maximum reverse recovery time of 120 ns. Packaged in a TO-220AB flange mount configuration, it supports a maximum junction temperature of 150 °C and offers a thermal resistance from junction to case of 0.112 K/W.

Feature Summary

  • Integrated ultrafast soft recovery diode for efficient commutation
  • Standard input type IGBT technology
  • Flange mount package design for robust mechanical stability

Applications

  • Phase control circuits
  • High power thyristor and diode modules
  • Industrial motor drives

Procurement Notes

Verify the specific suffix STRRP against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component matches the TO-220AB flange mount form factor required for your thermal management strategy. Cross-reference the 17 A current rating and 600 V blocking capability with your circuit design requirements before finalizing procurement.

Selection Notes

Select this component when a combined IGBT and diode solution is needed in a single TO-220AB package. The integrated ultrafast soft recovery diode reduces switching losses and electromagnetic interference compared to discrete solutions. Consider the 0.112 K/W thermal resistance for heatsink sizing in high-power applications requiring reliable operation up to 150 °C junction temperature.

Part Context

This part belongs to Infineon's lineup of insulated gate bipolar transistors with built-in diodes. It utilizes silicon technology and is designed for high-power switching applications. The device is classified under discrete semiconductors and transistors, specifically tailored for phase control and industrial power conversion systems where compact integration and fast recovery characteristics are critical.

Replacement Considerations

Consult Infineon datasheets for direct replacements within the IRG4BC series or equivalent International Rectifier legacy parts. Verify pinout compatibility and thermal performance metrics when substituting with other TO-220AB packaged IGBTs featuring integrated diodes.

IRG4BC30KDSTRRPIRG4BC30KDSTRRP

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