SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG4BC30KPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a 600V collector-emitter voltage rating and a continuous collector current of 30A at 25°C. The device utilizes a TO-220AB flange mount package with an isolated case connection. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.84V and a power dissipation capacity of 100W. It operates within a junction temperature range of -55°C to +150°C and offers a short-circuit withstand time of 10µs.
Verify the manufacturer status as International Rectifier was acquired by Infineon Technologies. Confirm component authenticity through authorized distributors or official Infineon channels. Check for RoHS compliance documentation specific to the manufacturing batch. Ensure the TO-220AB package matches thermal management requirements for the intended application.
Select this component for applications requiring 600V blocking capability and 30A continuous current handling. Consider the 1.84V saturation voltage for conduction loss calculations. Evaluate thermal resistance characteristics for heatsink design. Compare against legacy models like IRGBC30K if upgrading existing designs.
This discrete IGBT belongs to the IRG4BC series from International Rectifier's portfolio. It serves as a replacement for older devices such as the IRGBC30K and IRGBC30M. The component is designed for use in power electronics where efficiency and switching performance are critical.
Officially documented replacements include the IRGBC30K and IRGBC30M. Verify pinout compatibility and thermal interface requirements when substituting these legacy parts. Ensure that the replacement device meets the same voltage and current ratings for the specific circuit application.