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Product Detailed Parameters
- Description：IGBT 600V 34A 100W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：68 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 18A
- Power - Max：100 W
- Switching Energy：260µJ (on), 3.45mJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：22ns/540ns
- Test Condition：480V, 18A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRG4BC30S-S is a Generation 4 n-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter breakdown voltage of 600 V and a continuous collector current rating of 34 A at 25°C case temperature, with a pulsed collector current capability of 68 A. The device is housed in a D2PAK surface-mount package and offers a typical saturation voltage of 1.4 V at 15 V gate drive and 18 A collector current. Designed for standard speed applications below 1 kHz, it provides high efficiency through tight parameter distribution.
Feature Summary
- Generation 4 IGBT design optimized for minimum saturation voltage and low operating frequencies
- High short circuit rating suitable for motor control applications
- Combines low conduction losses with high switching speed
Applications
- Motor control systems
- Low frequency power conversion
- Industrial power supplies
Procurement Notes
Verify the component origin as International Rectifier or Infineon Technologies, noting that Infineon acquired International Rectifier. Confirm the specific suffix 'S' corresponds to the D2PAK tape and reel packaging format. Ensure the datasheet version matches the electrical characteristics provided, particularly regarding thermal resistance and switching loss parameters under specified test conditions.
Selection Notes
Select this component for applications requiring robust performance at low switching frequencies below 1 kHz. The Generation 4 technology ensures tighter parameter distribution compared to previous generations. Evaluate thermal management requirements based on the junction-to-case thermal resistance of 1.2 °C/W and the maximum power dissipation ratings at varying case temperatures.
Part Context
This part belongs to the IRG4BC series of standard speed IGBTs from International Rectifier, now part of Infineon Technologies. The series utilizes Generation 4 silicon technology to deliver high efficiency and reliability. The D2PAK package facilitates surface-mount assembly, making it suitable for compact industrial designs where space constraints are a consideration alongside thermal performance.
Replacement Considerations
The IRG4BC30S-S replaces the IRGBC30K and IRGBC30M devices. When selecting substitutes, ensure the replacement maintains comparable voltage ratings, current capabilities, and switching characteristics suitable for standard speed applications.
